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  21308 ti im no.a1004-1/13 LA75521VA overview the LA75521VA is a fully adjustment-free vif + sif signal processing ic for tv sets and vcrs that supports the pal video standard. it supports 38.0mhz, 38.9mhz, and 39.5mhz as the if frequencies, as well as pal sound multi-system (m/n, b/g, i and d/k), and contains an on-chip sound carrier trap. the ic employs a 4mhz frequency (which can be switched to 4.43mhz) as the reference frequency of the adjustment free circuit, and controls the vco, aft, and sound filter using an external input signal. features ? internal vco adjustment free circuit elimin ating the need for an external vco coil. ? internal sound carrier trap enables easy config uration of pal sound multi-system at low cost. ? considerably reduces the number of required peripheral parts. ? use of digital aft eliminates a problem of aft tolerance. ? package: ssop24(225mil) functions ? vif amplifier ? eqamp ? adjustment-free vco and pll detector circuit ? internal sound carrier trap ? digital aft circuit ? first sif detector circuit ? rf agc ? pll-fm detector circuit ? buzz canceller ordering number : en*a1004 monolithic linear ic if signal processing (vif+sif) ic that supports the pal video standard for tv sets and vcrs specifications of any and all sanyo semiconductor co.,l td. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' sproductsor equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general el ectronics equipment (home appliances, av equipment, communication device, office equipment, industrial equ ipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medica l equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, t ransportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of re liability and can directly threaten human lives in case of failure or malfunction of the product or may cause har m to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for app lications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is n o consultation or inquiry before the intended use, our customer shall be solely responsible for the use.
LA75521VA no.a1004-2/13 specifications maximum ratings at ta = 25 c parameter symbol conditions ratings unit maximum supply voltage v cc 6v allowable power dissipation pd max ta 70 c, mounted on a specified board.* 640 mw operating temperature topr -20 to +70 c storage temperature tstg -55 to +150 c * : mounted on a specified board: 76.1mm 114.3mm 1.6mm, glass epoxy board operating conditions at ta = 25 c parameter symbol conditions ratings unit recommended supply voltage v cc 5.0 v operating supply voltage v cc op 4.5 to 5.5 v electrical characteristics at ta = 25 c, v cc = 5.0v, fp = 38.9mhz ratings parameter symbol conditions no. min typ max unit vif block circuit current i 4 v1 75 85 95 ma max rf agc voltage v 14 h v2 4.0 4.5 5.0 v min rf agc voltage v 14 l v3 0.0 0.5 1.0 v input sensitivity v i video out 2 v4 26 32 38 db v agc range gr v5 58 63 db max allowable input v i max v6 95 100 db v quiescent video output voltage v 5 v7 2.2 2.5 2.8 v sync signal edge voltage v 5 tip v8 0.8 1.0 1.2 v video output level v o v9 1.0 1.2 1.4 vp-p black noise threshold voltage v bth v10 0.5 0.8 1.1 v black noise clamp voltage v bcl v11 1.2 1.5 1.8 v video s/n s/n b/g v12 46 50 db c-s best ic-s p/s = 10db v13 38 43 db differential gain dg v in = 80db v14 3 6.5 % differential phase dp v15 3 5 deg quiescent aft voltage v 12 15pin to v cc v16 2.0 2.5 3.0 v max aft voltage v 12 h load 22k /22k v17 4 4.5 5 v min aft voltage v 12 l load 22k /22k v18 0 0.5 1 v aft sensitivity sf load 22k /22k v19 8.5 12.5 16.5 mv/khz apc pull-in range (u) fpu v20 2.0 2.4 mhz apc pull-in range (l) fpl v21 -2.4 -2.0 mhz vco control sensitivity v22 3 6 12 khz/mv vif input resistance r i 38.9mhz v23 1.0 1.5 k vif input capacity c i 38.9mhz v24 3 6 pf n trap1 (4.5m) nt1 wrt 1mhz v25 -30 -35 db n trap2 (4.8m) nt2 wrt 1mhz v26 -19 -24 db bg trap1 (5.5m) bt1 wrt 1mhz v27 -27 -32 db bg trap2 (5.85m) bt2 wrt 1mhz v28 -20 -25 db i trap1 (6.0m) it1 wrt 1mhz v29 -25 -30 db i trap2 (6.55m) it2 wrt 1mhz v30 -15 -20 db dk trap1 (6.5m) dt1 wrt 1mhz v31 -25 -30 db group delay 1 ntsc (3.0m) ngd1 wrt 1mhz v32 30 80 145 ns group delay 1-1 ntsc (3.5m) ngd1-1 wrt 1mhz v33 110 200 290 ns group delay 2 bg (4m) bgd2 wrt 1mhz v34 50 130 210 ns group delay 2-1 bg (4.4m) bgd2-1 wrt 1mhz v35 120 200 280 ns continued on next page.
LA75521VA no.a1004-3/13 continued from preceding page. ratings parameter symbol conditions no. min typ max unit group delay 3 i (4m) igd3 wrt 1mhz v36 0 80 130 ns group delay 3-1 i (4.4m) igd3-1 wrt 1mhz v37 80 120 160 ns group delay 4 dk (4m) dgd4 wrt 1mhz v38 10 30 50 ns group delay 4-1 dk (4.4m) dgd4-1 wrt 1mhz v39 30 60 90 ns video f characteristics mn1 vfmn1 m/n 1 to 2mhz v40 -1.0 0.0 1.0 db video f characteristics mn2 vfmn2 m/n 2 to 3mhz v41 -1.0 0.0 1.0 db video f characteristics mn 3 vfmn3 m/n 3.58mhz v42 -3.0 -1.5 0.0 db video f characteristics bg1 vfbg1 b/g 1 to 3mhz v43 -1.0 0.0 1.5 db video f characteristics bg2 vfbg2 b/g 3 to 4mhz v44 -1.5 0.0 1.5 db video f characteristics bg3 vfbg3 b/g 4.43mhz v45 -2.5 -1.0 0.5 db video f characteristics i1 vfi1 i 1 to 3mhz v46 -1.0 0.0 1.0 db video f characteristics i2 vfi2 i 3 to 4mhz v47 -1.0 0.0 1.5 db video f characteristics i3 vfi3 i 4.43mhz v48 -1.5 0.0 1.5 db video f characteristics dk1 vfdk1 d/k 1 to 3mhz v49 -1.0 0.0 1.0 db video f characteristics dk2 vfdk2 d/k 3 to 4mhz v50 -1.0 0.0 1.5 db video f characteristics dk3 vfdk3 d/k 4.43mhz v51 -1.5 0.0 1.5 db group delay 2-2 bg shift (4m) bgd2-2 wrt 1mhz v52 50 100 150 ns group delay 2-3 bg shift (4.4m) bgd2-3 wrt 1mhz v53 110 180 250 ns 1st sif block sif carrier output level 1 so1 v i = 1mv f1 21 43 86 mvrms sif carrier output level 2 so2 v i = 10mv f2 21 43 86 mvrms 1st sif max input si max f3 110 120 db v 1st sif input resist ance ris 33.4mhz f4 2 2.4 k 1st sif input capacit y cis 33.4mhz f5 3 6 pf sif block limiting sensitivity (split) v i (lim) (sp) p = 80db cw s1 20 25 30 db v limiting sensitivity (inter) v i (lim) (in) p = 80db p/s s2 29 35 41 db fm detection output voltage v o (fm) f = 5.5mhz, f = 30khz s3 390 560 730 mvrms am removal ratio amr s4 50 60 db distortion factor thd s5 0.3 0.8 % fm detection output s/n s/n (fm) p = 80db cw s6 55 60 db pal/nt audio voltage gain difference gd s7 6 db pal de-emphasis pdeem s8 -3 db nt de-emphasis ndeem s9 -3 db control block sif system sw threshold voltage a/b v7_9th c1 2.2 2.5 2.8 v 38mhz/38.9mhz threshold voltage v10th1 c2 0.7 1.0 1.3 v 38.9mhz/39.5mhz threshold voltage v10th2 c3 3.7 4.0 4.3 v inter-carrier system v13th c4 0.3 v aft mute level/sif trap shift threshold voltage 1 v15th1 c5 0.7 1.0 1.3 v aft mute level/sif trap shift threshold voltage 2 v15th2 c6 2.2 2.5 2.8 v aft mute level/sif trap shift threshold voltage 3 v15th3 c7 3.7 4.0 4.3 v others ref clock input level reflev 4.0mhz o1 83 90 95 db v reference frequency sw threshold resistance r11 o2 150 270 k
LA75521VA no.a1004-4/13 package dimensions unit : mm (typ) 3287 system changeover a. sif system sw the sif system changeover can be made by connecting both/either a (pin 7) and/or b (pin 9) to gnd or by keeping both or either of them open. a b bg i dk mn fm det level de-emphasis gnd gnd { 0db 50 s gnd open { 0db 50 s open gnd { 0db 50 s open open { 6db 75 s note: { indicates that the system is selected. b. if system sw the if frequency becomes 38.9mhz when pin 10 is open. the if frequency changes to 38.0mhz when pin 10 is connected to gnd. this frequency also changes to 39.5mhz when pin 10 is set to v cc . c. split/inter carrier sw inter carrier is selected by connectin g the 1st sif input (pin 13) to gnd. d. reference frequency changeover sw the frequency becomes 4.43mhz when pin 11 is open. the frequency become s 4.0mhz when 270k is connected between pin 11 and gnd. e. aft mute level, trap point shift by changing the voltage of pin 15, the potential when aft is muted and the trap point of either ?just? or ?shift? (about +220khz) can be selected. pin 15 potential aft mute potential trap point shift v cc to 4v middle (v cc /2) just 4v to 2.5v middle (v cc /2) shift 2.5v to 1v hi (v cc ) just 1v to gnd hi (v cc ) shift * with v cc = 5v f. when the fm detection function is not used when the sif circuit is not used and the fm detection vco is to be stopped, short-circuit pin 1 - gnd with the resistance of 1k or less. sanyo : ssop24(225mil) 6.4 6.5 0.5 4.4 (0.5) (1.3) 24 13 1 12 0.22 0.5 0.15 0.1 1.5max pd max - ta 0 200 400 600 800 1000 1200 -20 0 20 40 60 80 100 ambient t emperature, t a - c allowable power dissipation, pd max - mw mounted on a specified board: 76.1mm 114.3mm 1.6mm, glass epoxy board
LA75521VA no.a1004-5/13 pin assignment block diagram sif system sw b 1 de-emphasis c audio bias filter v cc video output eq filter sif system sw a apc filter vif frequency sw reference cp input audio output filter control c aft mute level gnd vif in 2 vif in 1 vif agc filter 1st sif input rf agc output aft output fm pll filter rf agc vr sif carrier output 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 sif agc filter la75521v a top view vif amp apc video det vco aft 1 s tsif amp agc int split trap if agc fm det amp 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 19 20 21 22 23 24 18 eq amp rf agc mode ctrl sw sw10 vif frequency v3 39.5mhz v2 38.9mhz v1 38.0mhz 4.43mhz short 4.0mhz open sw11 reference sw13 system open split short inter vif freq. 4.43/4mhz v3 v2 v1 sw10 sw11 video output aft output sawf(p) audio output sound carrier output sawf ( s ) sw15 rf agc output vif/sif input sw13 v cc 1 1000pf 1 f 0.022 0.01 330pf 0.01
LA75521VA no.a1004-6/13 ac characteristics test circuit 0.01 30kvr v cc (5v) 22k 22k v10 0.47 0.01 30k 51 ifagc sif input 0.1 video output2 eq filter 100k 1.5k 0.01 330pf vif amp apc video det vco aft 1stsif amp agc int split trap if agc fm det amp eq amp rf agc mode ctrl sw de- emp sif amp amp agc trap 0.01
LA75521VA no.a1004-7/13 test circuit input impedance test circuit (vif and first sif input impedance) 1 2 3 4 5 6 7 8 9 10 11 12 impedance analyzer 0.01 f 1k 100 f v cc 0.01 f 22k 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f 22k 0.01 f 0.01 f 24 23 22 21 20 19 18 17 16 15 14 13 vif in 1st sif in 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f la75521v a
LA75521VA no.a1004-8/13 pin functions pin no. pin name function equivalent circuit 1 de-emphasis c de-emphasis capacitor connection pin this is used to switch the equivalent resistance (5k or 7.5k ) internally in the ic to select the time constant. this switching is linked to the sif input switch. to disable de-emphasis, disconnect the capacitor. connection of an external capacitance of 0.01 f enables switching between 50 and 75 s. when the fm detector circui t is not to be used, the fm vco can be stopped by connecting it to ground with a resistor of 1k or less. 2 sif agc filter agc filter pin for sif carrier 0.01 f is recommended for c1. 3 fm pll filter pll filter pin of fm detector this is used to configure an external lag lead filter. example: connect 330pf in par allel with the filter (0.033 f + 3.3k ). 4 v cc power supply 5 6 eq out eq filter equalizer circuit. this circuit is used to correct the video signal frequency characteristics. notes on equalizer amplifier design ? the equalizer amplifier is designed as a voltage follower amplifier with a gain of about 0 db. when used for frequency characteristics correction, a capacitor, inductor, and resistor must be connected in series between pin 6 and ground. equalizer amplifier gain av = r1 z + 1 r1 is the ic internal resistance, and is 1k . in the application design, simply select z to correspond to the desired characteristics. however, since the eq amplifier gain will be maximum at the resonant point defined by z, care is required to assure that distortion does not occur. continued on next page. 1 4k 0.01 c1 3 8k 3 0.033 330pf 6 2k r1:1k c l r =z 5
LA75521VA no.a1004-9/13 continued from preceding page. pin no. pin name function equivalent circuit 7 9 sif system sw a sif system sw b sif system selection switch pins. combining the settings of these two pins supports four systems. in m/n mode, the audio output level is increased by 6db. the internal trap is also linked to these switches. the truth-values are as follows. pin 7 pin 9 mode h h m h l i l h b/g l l d/k 8 apc filter pll apc filter c onnection pin. the apc count is switched internally in the ic. the vco is normally controlled by route a. when unlocked and during weak field reception, the vco is controlled by route b and the loop gain is increased. for this apc filter we recommend a resistor of 51 and capacitor of 0.47 f. the buzz characteristics can be improved by connecting a capacitor of 100pf or so between pins 5 and 8. 10 vif frequency sw switch pin for selecting the if frequency when this pin is open, 1/2v cc exists. v cc : 39.5mhz open: 38.9mhz gnd: 38.0mhz 11 reference cp input reference signal input pin necessary for adjusting the internal sound carri er trap, aft, etc. either 4.0 or 4.43mhz can be selected. use the configuration shown in example 1 when using 4.43mhz and configuration shown in example 2 when using 4.0mhz. since no oscillator can be configured simply by connecting the x?tal resonator to pin 11, input the reference signal from an external source without fail. continued on next page. 7 9 50k 80k 30k 1k 1k 50k 80k 30k 1k 1k a b 8 from apc det a b 1k 1k 10 11k 50k 50k 11 200k 4.43m 11 270k 4.0mhz 11 example 1 example 2 1000pf 1000pf
LA75521VA no.a1004-10/13 continued from preceding page. pin no. pin name function equivalent circuit 12 aft output aft output pin. the aft center voltage is generated by an external bleeder resistor. the aft gain is increased by increasing the resistance of this external bleeder resistor. for the resistor we recommend a resistance equal to or greater than 22k . for the filter c1 we recommend a capacitance of 0.1 f. 13 1st sif input first sif input pin. a dc cut capacitor must be used in the input circuit. (a) if a saw filter is used : the first sif sensitivity can be increased by inserting an inductor between the saw filter and the ic to neutralize the saw filter output capacitance and the ic input capacitance. (b) when used in an intercarrier system : connect this pin to ground. 14 rf agc output rf agc output pin. this output controls the tuner rf agc. this is the open collector output and a protective 200 resistor is inserted. determine the external bleeder resistor value in accordance with the specifications of the tuner. 15 aft mute level a switch pin for selecting the mute potential when muting is applied to the aft due to pll unlock, etc. at the same time, it is used to control the trap point shift of the audio trap (in the b/g mode). when the frequency characteristics of the video band are to be made as flat as possible with the split input, the trap can be shifted to the high range although the attenuation of the sound carrier will drop. therefore, when used in combination with the saw filter, verify that the level is high enough before use. voltage atf mute voltage trap shift v cc to 4v v cc /2 0 4v to 2.5v v cc /2 +250khz 2.5v to 1v v cc 0 1v to gnd v cc +250khz * when v cc = 5 v continued on next page. 12 500 500 r r c1 13 2k 14 200 v cc 15 66k 34k
LA75521VA no.a1004-11/13 continued from preceding page. pin no. pin name function equivalent circuit 16 if agc if agc filter connection pin. the signal peak-detected by the built-in agc detector is converted to the agc voltage at pin 16. additionally, a second agc filter (a lag-lead filter) used to create the dual time constants is provided internally in the ic. use a 0.022 f capacitor as the external capacitor (c1), and adjust the value according to the sag, agc speed, and other characteristics. 17 18 vif in2 vif in1 vif amplifier input pin the input circuit is a balanced circuit, and the input impedance is as follows: r 1.0k 19 gnd 20 rf agc vr rf agc volume connection pin this pin sets the tuner rf agc operating point. also, the fm output and the video output can both be muted at the same time by connecting this pin to ground. 21 sif carrier out first sif output pin this is an emitter-follower output with a 200 resistor attached in series. continued on next page. 16 5k 1k 1k c1 17 18 1k 1k 20 1k 1k 21 200
LA75521VA no.a1004-12/13 continued from preceding page. pin no. pin name function equivalent circuit 22 audio bias filter connection pin for a filter used to hold the fm detector output dc voltage fixed. normally, a 1 f electrolytic capacitor should be used. the capacitance (ci) should be increased if the low band (around 50hz) frequency characteristics need to be improved. 23 filter control c internal filter (trap) control pin connect a capacitor with a capacitance between 0.47 to 1 f, depending on the video s/n as well as the levels of the am and pm noise. 24 audio output sound output pin emitter follower output 22 300 300 40k 40k + c1 23 24 1k
LA75521VA no.a1004-13/13 ps this catalog provides information as of february, 2008. specificati ons and information herein are subject to change without notice. sanyo semiconductor co.,ltd. assumes no responsibil ity for equipment failures that result from using products at values that exceed, even momentarily, rated v alues (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-qua lity high-reliability products, however, any and all semiconductor products fail or malfunction with some probab ility. it is possible that these probabilistic failures or malfunction could give rise to accident s or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the us e of the technical information and products mentioned above. information (including circuit diagrams and circuit par ameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained he rein are subject to change without notice due to product/technology improvement, etc. when designing equip ment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control l aws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd.


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